Appeal No. 2000-0732
Application No. 08/741,799
The invention is directed to a method for retarding
upward diffusion of a dopant within a semiconductor body.
More particularly, a barrier layer of material is formed by
implanting the material through the top portion of the
semiconductor body so as to form the barrier layer below the
top surface of the semiconductor body and at a depth greater
than the depth of a source/drain region within the
semiconductor body.
Representative independent claim 1 is reproduced as
follows:
1. In a semiconductor process, a method of retarding
upward diffusion of a dopant within a semiconductor body, said
method comprising the steps of:
providing a semiconductor body having a top surface and a
heavily-doped layer beneath and separated from the top
surface, said heavily-doped layer including a first dopant;
forming a transistor gate electrode over the
semiconductor body;
forming a transistor source/drain region within the
semiconductor body; and
implanting a material through a top portion of the
semiconductor body to form a barrier layer of said material
beneath and separated from the top surface and at a greater
depth than the source/drain region, for retarding the upward
diffusion of said first dopant.
2–
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