Appeal No. 2000-1058 Page 2
Application No. 08/673,972
Appellants' invention relates to a plasma etch process
including the provision of a vacuum chamber, supplying a
fluorine containing etch gas to the chamber, coupling RF
energy into the chamber to form and maintain a plasma of the
etch gas and furnishing a gaseous source of silicon to form a
passivating polymer on an article placed on a support in the
chamber. An understanding of the invention can be derived
from a reading of exemplary claim 10, which is reproduced
below.
10. A plasma etch process comprising:
a) providing a vacuum chamber for forming and
maintaining a plasma therein;
b) providing an article to be processed by said
plasma on a support in the chamber;
c) supplying a fluorine-containing etch gas to the
chamber;
d) coupling RF energy into the chamber for forming
and maintaining a plasma of said etch gas in the chamber;
and
e) supplying to the chamber a gaseous source of
silicon or carbon in addition to said etch gas so as to
form a passivating polymer on said article.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Tsuchimoto 4,123,316 Oct. 31,
1978
Douglas 4,807,016 Feb. 21,
1989
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