Ex Parte HONDA - Page 3



          Appeal No. 2000-1324                                                        
          Application No. 08/649,487                                                  

          in support of the rejection, and to appellant's Brief (Paper No.            
          15, filed May 25, 1999), Supplemental Brief (Paper No. 18, filed            
          September 24, 1999), and Reply Brief (Paper No. 20, filed January           
          14, 2000) for appellant's arguments thereagainst.                           
                                       OPINION                                        
               We have carefully considered the claims, the applied prior             
          art references, and the respective positions articulated by                 
          appellant and the examiner.  As a consequence of our review, we             
          will reverse the obviousness rejection of claims 17 and 18.                 
               Independent claim 17 recites, in pertinent part, "a photo              
          catalytic layer provided on an outer surface of the light-                  
          transmitting portion [of the luminaire]" (underlining ours for              
          emphasis).  Although Akira clearly states (e.g., Translation page           
          6) that the titanium oxide or photo catalytic layer is formed on            
          the inner surface of the cover component of the lighting system,            
          the examiner contends (Answer, pages 4-5) that "[i]t would have             
          been obvious to have a layer inside or outside of the                       
          transmitting portion, since this would fall withing [sic] the               
          routine design capabilities of the artisan."                                
               The examiner has clearly overlooked the explicit teaching of           
          Akira (Translation, page 6) that "[t]he semiconductor is directly           
          irradiated by the light emitter because it (the semiconductor)              

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