Appeal No. 2000-1585
Application No. 08/883,427
with dielectrics between devices will become increasingly
difficult. Specifically, the present invention relates to a
process for covering an interconnection wiring level in a surface
thereof on semiconductor substrate which comprises:
coating a first flowable oxide layer onto the
interconnection wiring level;
curing the flowable oxide layer, and annealing
said layer wherein said annealing is carried out in the
presence of hydrogen and aluminum to cause gas to
diffuse into the flowable oxide layer and reduce its
dielectric constant to a value below 3.2.
The present invention is also concerned with a process for
insulating adjacent devices in a semiconductor substrate. The
process comprises providing a semiconductor device comprising a
semiconductor substrate, at least two FET or bipolar transistor
devices and a trench in the substrate located between the
devices. The process further includes flowing a flowable oxide
into the trench followed by curing and annealing. The annealing
is carried out in the presence of hydrogen.
The following claim further illustrates the present
invention.
27. A process for insulating adjacent devices in a
semiconductor substrate which comprises:
3
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