Appeal No. 2000-1702
Application No. 08/841,908
THE INVENTION
The invention is directed to a method for depositing silicate glass on a
semiconductor wafer wherein carbon particles impurities on the upper surface of the wafer
is subjected to a plasma ignited in a gaseous atmosphere containing a mixture of a diatomic
oxygen and an oxygen containing oxidant. The plasma converts the carbon particle
impurities to a carbon containing gas which can be removed from the chamber.
Additional limitations are described in the following illustrative claim.
THE CLAIM
Claims 2 is illustrative of appellant’s invention and is reproduced below.
2. A method for depositing silicate glass on a semiconductor wafer comprising
the steps of:
placing the wafer within a chemical vapor deposition chamber equipped with
a plasma generator;
flowing a gaseous mixture comprising TEOS and diatomic oxygen into the
deposition chamber while generating a plasma in the chamber, thereby depositing a
silicate glass base layer having an upper surface on the wafer, said glass base layer
having carbon particle impurities on said upper surface;
subjecting the base layer to a plasma ignited in a gaseous atmosphere
containing a mixture of diatomic oxygen and a diamagnetic, oxygen-containing
oxidant, for a period sufficient to convert said carbon particle impurities to a
carbon-containing gas which can be removed from the chamber; and
depositing a final glass layer on said upper surface by flowing TEOS gas and
ozone gas into the chamber.
2
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007