Appeal No. 2000-1713
Application 09/025,551
controlling a shape of said reference plane to a planar
shape by deforming the workpiece; and then
removing material constituting the workpiece from the
surface of the workpiece toward said reference plane.
[emphasis added]
7. A workpiece surface processing method as claimed in
claim 1, wherein said workpiece comprises two semiconductor
wafers which are bonded to each other.
8. A semiconductor thin layer forming method comprising
the steps of:
bonding the surface of a first semiconductor wafer and
the surface of a second semiconductor wafer to each other to
form a composite;
controlling a shape of a reference plane which is set in
one of said first semiconductor wafer and said second
semiconductor wafer to have a planar shape by deforming the
composite; and then
removing said first semiconductor wafer from the back
surface of said first semiconductor wafer toward said
reference plane to form a semiconductor thin layer from the
residual first semiconductor wafer. [emphasis added]
In support of the rejections, the examiner relies upon
the following prior art:
Yamaki et al. (Yamaki) 4,962,056 Oct. 9, 1990
Miller 5,529,051 June 25, 1996
Claims 1-7 stand rejected under 35 U.S.C. § 103 as being
unpatentable over Miller.
Claim 8 stands rejected under 35 U.S.C. § 103 as being
unpatentable over Miller in view of Yamaki.
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