Ex Parte Foote et al - Page 1



               The opinion in support of the decision being entered                   
               today was not written for publication in a law journal                 
               and is not binding precedent of the Board.                             
                                                               Paper No. 13           
                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                                                                     
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                                                                     
                       Ex parte DAVID K. FOOTE and MINH V. NGO                        
                                                                                     
                                Appeal No. 2000-1955                                  
                             Application No. 08/857,055                               
                                                                                     
                                      ON BRIEF                                        
                                                                                     
          Before KIMLIN, KRATZ and LIEBERMAN, Administrative Patent Judges.           
          KIMLIN, Administrative Patent Judge.                                        
                                 DECISION ON APPEAL                                   
               This is an appeal from the final rejection of claims 1-10              
          and 16-28.  Claims 11-15, the other claims remaining in the                 
          present application, stand withdrawn from consideration pursuant            
          to an election requirement.  Claim 1 is illustrative:                       
               1.  A process for forming an anti-reflective coating on a              
          semiconductor structure, comprising the steps of:                           
               (a) forming an anti-reflective layer of a material                     
          selected from the group consisting of silicon oxime, silicon                
          oxynitride, and silicon nitride on the structure; and                       
               (b) growing a barrier layer on the anti-reflective layer               
          using a nitrous oxide plasma discharge to convert a surface                 
          portion of the anti-reflective layer into silicon dioxide.                  
                                         -1-                                          



Page:  1  2  3  4  5  Next 

Last modified: November 3, 2007