Appeal No. 2001-0297
Application No. 09/196,375
BACKGROUND
Appellant's invention relates to a bipolar transistor with a high breakdown voltage
collector. The transistors are used in combination for both high speed operation and for
large drive currents on the same monolithic integrated circuit. An understanding of the
invention can be derived from a reading of exemplary claim 3, which is reproduced
below.
3. An integrated circuit, comprising:
a first transistor including:
a first doped buried region within a semiconductor body, said first
doped buried region including a portion having a first thickness and a
portion having a second thickness, said first thickness being less than
said second thickness;
a first collector region disposed over said buried region;
a first base region with said collector region; and
a first emitter region within said base region;
said first collector, said first base region and said first emitter region
being disposed over said buried region having a first thickness and at
least said first emitter region and said first base region extending over
said portion having a second thickness; and
a second transistor including:
a second doped buried region with said semiconductor body, said
second doped buried region being substantially uniform in thickness;
a second collector region over said second buried region;
a second base region within said second collector region; and
2
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