Appeal No. 2001-0929
Application No. 08/697,321
APPENDIX
1. A process for implanting ions into a semiconductor wafer,
the process comprising:
supporting the semiconductor wafer on a first electrode in a
chamber;
injecting a gas into the chamber, the gas comprising dopants
to be implanted into the semiconductor wafer;
sequentially providing a plurality of first voltage pulses to
the first electrode, each of the first voltage pulses being direct
current (DC) voltage pulses less than 10 kV in magnitude, each of
the first voltage pulses simultaneously ionizing the gas to create
a plasma adjacent to said semiconductor wafer and accelerate and
implant ions from the plasma into the semiconductor wafer; and
removing all plasma-inducing electric fields after each of the
first voltage pulses to extinguish the plasma between each of the
first voltage pulses.
27. A method of treating a workpiece comprising steps of:
inserting the workpiece into an interior of a treatment
chamber and supporting the workpiece on a conductive workpiece
support such that a treatment surface of the workpiece faces a
treatment region in the interior of the treatment chamber, the
treatment chamber having a conductive wall portion that bounds the
interior of the treatment chamber;
injecting a treatment material comprising neutrally uncharged
gas molecules into the treatment chamber such that the gas
molecules occupy the treatment region; and
repeatedly relatively biasing the conductive workpiece support
and the conductive wall portion of the treatment chamber by
applying D.C. voltage pulses to ionize the gas molecules injected
into the treatment chamber and to accelerate and implant resulting
charged particles into the workpiece.
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