Appeal No. 2002-0677
Application 09/257,899
18. A method for forming a roughened polysilicon surface on
a substrate, comprising:
forming a first polysilicon layer on the substrate;
subsequent to forming the first polysilicon layer, forming a
second polysilicon layer at a temperature and a pressure selected
to form a hemispherical grained surface supported by the first
polysilicon layer, wherein the hemispherical grained surface has
a plurality of grains; and
removing a portion of the second polysilicon layer, thereby
decreasing a size of the grains and increasing a distance between
adjacent grains while maintaining continuity of the first
polysilicon layer.
THE REFERENCES
Fazan et al. (Fazan) 5,130,885 Jul. 14, 1992
Ko et al. (Ko) 5,350,707 Sep. 27, 1994
Hirota et al. (Hirota) 5,372,962 Dec. 13, 1994
THE REJECTION
The claims stand rejected under 35 U.S.C. § 103 as being
obvious over the combination of Hirota, Ko, Fazan and the
appellant’s admitted prior art.1
OPINION
We reverse the aforementioned rejection.
Hirota discloses a method for increasing capacitance by
1 In the answer (page 5) the examiner relies upon
U.S. patent 5,256,587 to Jun et al. Because this reference is
not included in the statement of the rejection, it is not
properly before us. See In re Hoch, 428 F.2d 1341, 1342 n.3, 166
USPQ 406, 407 n.3 (CCPA 1970). Accordingly, we do not further
discuss this reference.
2
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