Appeal No. 1998-2401
Application 08/286,106
b. prenucleating portions of said adsorbed layer by
exposing said portions corresponding to a desired pattern of an
energy source;
c. selectively forming build-up layers over said
prenucleated portions to form a mask over said structure; and
d. etching said structure in areas not covered by said
mask to form patterned features.
13. A method for masking and implanting a structure
comprising:
a. forming at least one monolayer of adsorbed molecules on
a partially completed integrated circuit structure;
b. prenucleating portions of said adsorbed layer by
exposing said portions corresponding to a desired pattern of an
energy source;
c. selectively forming build-up layers over said
prenucleated portions to form a mask over said structure; and
d. implanting into portions of said structure not covered
by said mask.
14. A method for masking and oxidizing a structure
comprising:
a. forming at least one monolayer of adsorbed molecules on
a partially completed integrated circuit structure;
b. prenucleating portions of said adsorbed layer by
exposing said portions corresponding to a desired pattern of an
energy source;
c. selectively forming build-up layers over said
prenucleated portions to form a mask over said structure; and
d. oxidizing a surface of said structure not covered by
said mask.
THE REFERENCES OF RECORD
The examiner relies upon by the following references:
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: November 3, 2007