Appeal No. 1999-2595
Application No. 08/927,106
The examiner finds that Han teaches applying an amorphous NGO
precursor film over a LaAlO3 substrate with subsequent annealing of
the film at temperatures ranging from 750 to 1000°C. in an oxygen
atmosphere for 6-12 hours to form a crystalline NGO film (Answer,
page 5). Since appellants’ specification discloses that nickel
from the substrate diffuses into the NGO at temperatures from about
1000 to about 1300°C., the examiner concludes that at the sintering
temperature of 1000°C. for a sufficient time as taught by Han,
there would have been an interlayer of NGO diffused with nickel in
the structure of Ozaki, Woolf ‘389, and Boikov (id.). We disagree.
As correctly argued by appellants (Brief, pages 6-7), Han
teaches that NGO films on a LaAlO3 substrate show “atomically
abrupt interfaces” (Han, page 3048, right column, first full
paragraph). Accordingly, Han does not teach or suggest any
diffusion at any sintering temperature when using the LaAlO3
substrate. Therefore, assuming arguendo that it would have been
obvious to sinter a NGO film on a nickel substrate rather than the
LaAlO3 of Han, one of ordinary skill in the art would not be
directed to sintering temperatures which cause diffusion of the
substrate into the NGO film. Thus, even though appellants disclose
4(...continued)
ll. 45-60).
5
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