Appeal No. 2000-1003
Application No. 08/631,465
APPENDIX
1. An apparatus for film deposition comprising:
a deposition chamber;
a substrate support within the deposition chamber;
a source of target particles;
a plasma generator creating a plasma for initially ionizing
the target particles that accelerates the target
particles along a distribution of trajectories;
a secondary ionization zone within said deposition chamber
between the source and the substrate, the secondary
ionization zone promoting ionization of the target
particles; and
a magnetic field generator creating a magnetic field between
the secondary ionization zone and the substrate support
accelerating the ionized target particles along a
substantially collimated trajectory perpendicular to
the substrate support.
15. A method for depositing a film onto a substrate
comprising the steps of:
providing a source of target atoms;
accelerating the target atoms from the source towards the
substrate, wherein a first plurality of the target
atoms are electrically charged to a first polarity;
passing the target atoms through at least one secondary
ionization zone positioned between the source and the
substrate to electrically charge a second plurality of
the target atoms to the first polarity, the second
plurality being greater than the first plurality; and
steering the electrically charged target atoms into a
collimated stream directed perpendicular to the
substrate using an electrostatic field.
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