Appeal No. 2001-0032
Application No. 08/735,389
6. A method for producing a crystalline layer of SiC having
at least a region thereof doped with boron atoms, said method
comprising the steps of:
(a) implanting boron atoms into a layer of crystalline
SiC;
(b) implanting carbon atoms into said layer in order
to form more carbon interstitials than the amount
of carbon vacancies present in SiC and in a manner
such that said layer remains crystalline; and
(c) heating said layer to anneal it in order to make
said boron atoms electrically active; and
wherein step (b) is performed at either one of the following
1) before, 2) after or 3) at the same time as step (a).
THE REFERENCE
Baliga et al. (Baliga) 5,318,915 Jun. 7, 1994
THE REJECTIONS
The claims stand rejected as follows: claims 2-4, 6 and 7
under 35 U.S.C. § 112, first paragraph, written description
requirement, and claims 2-4 and 6 under 35 U.S.C. § 102(b) as
anticipated by Baliga.
OPINION
We reverse the aforementioned rejections.
Rejection under 35 U.S.C. § 112
The examiner argues that “[t]here is no explicit or implicit
disclosure of ‘implanting carbon atoms into SiC layer in a manner
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