Appeal No. 2001-0032
Application No. 08/735,389
The examiner argues that “[t]here is not even an exemplified
carbon dose to determine whether the layer of SiC becomes
amorphous or crystalline due to carbon implantation” (answer,
page 3), and that “[w]ithout proper disclosure such as carbon
dose and substrate temperature, one can not conclude that carbon
is implanted in SiC in a manner [such that] SiC remains
crystalline” (answer, page 6). These arguments are not well
taken because they are directed toward operability or enablement,
which are not issues before us.
For the above reasons we find that the examiner has not
carried the burden of establishing a prima facie case of lack of
adequate written description of the appellants’ claimed
invention.
Rejection under 35 U.S.C. § 102(b)
Baliga discloses a method for forming a p-n junction in SiC
wherein, sequentially, SiC is amorphodized by implanting ions
which can be carbon into the SiC, p-type dopant ions which can be
boron are implanted into the SiC, the SiC is annealed, and the
SiC is recrystallized to convert the amorphous region into a
substantially monocrystalline region (col. 3, lines 27-64;
col. 4, lines 29-31).
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