Appeal No. 2001-0397
Application 09/304,798
10. A system for making an air capacitive hole for a
pressure transducer structure, the air capacitive hole lying
between a bottom metallization feature and a top metallization
feature, the system for making the air capacitive hole
comprising:
a plasma etcher for plasma etching a bottom metalliza-
tion layer to form the bottom metallization feature that is not
in electrical contact with a substrate;
a deposition chamber for depositing a dielectric layer
over the bottom metallization feature, the dielectric layer
having a tungsten plug that is in contact with the bottom
metallization feature;
the plasma etcher being configured to etch a top
metallization layer to form the top metallization feature that
substantially overlies the tungsten plug, but leaves an opening
down to the tungsten plug; and
a bath for submersing the pressure transducer structure
into a basic solution, such that the tungsten plug comes in
direct contact with the basic solution and causes the tungsten
plug to erode and define the air capacitive hole.
The references relied upon by the examiner are:
Turner et al. (Turner) 5,281,320 Jan. 25, 1994
Stanley Wolf et al. (Wolf), “Silicon Processing for the VLSI
Era,” (Lattice Press, 1986)
GROUND OF REJECTION
Claims 10-24 stand rejected under 35 U.S.C. § 103 as
unpatentable over Turner in view of Wolf.
We reverse.
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