Appeal No. 2001-0397
Application 09/304,798
DISCUSSION
The invention is directed to a system for making air
capacitive holes in a pressure transducer structure. Appeal
Brief, Paper No. 15, received June 20, 2000, page 1, Summary of
the Invention. According to appellants, “the process of
integrating pressure transducers into standard CMOS circuitry
manufacturing is a task that increases complexity and adds a
substantial amount of cost to CMOS fabrication operations.”
Specification, page 3, lines 9-11. According to appellants, the
present invention overcomes the drawbacks of the prior art
processes by providing a system for making an air capacitive hole
for a pressure transducer structure which may be efficiently made
using conventional CMOS manufacturing techniques that avoid
introducing additional manufacturing complexities and increased
costs. Specification, page 4, lines 2-4.
The examiner found that Turner teaches a system for
metallization of semiconductor devices having the features
recited in claims 10-24, with the exception of a bath for
submersing the pressure transducer structure. Examiner’s Answer,
Paper No. 16, mailed July 25, 2000, page 3. The examiner notes
3
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