Appeal No. 2001-0416
Application No. 09/074,292
Claim 1 is representative of the subject matter on appeal
and is reproduced below:
1. A method of manufacturing a semiconductor device
having features with a dimension of ½ the minimum
pitch, wherein the method comprises:
forming a target layer of material on a partially
completed semiconductor device, wherein the target
layer of material is to be etched to a dimension of ½
the minimum pitch;
a first etch process of the target layer of
material with masks having a dimension of the minimum
pitch; and
a second etch process of the target layer of
material with the masks offset by a distance of ½ the
minimum pitch.
The references relied upon by the examiner are:
Keyser 4,484,978 Nov. 27, 1984
Lee et al. (Lee) 5,444,020 Aug. 22, 1995
Grounds of Rejection
1. Claims 1 and 2 stand rejected under 35 U.S.C. § 112,
second paragraph, as being indefinite.
2. Claims 1 and 2 stand rejected under 35 U.S.C. § 103 as
unpatentable over Lee.
3. Claim 3 stands rejected under 35 U.S.C. § 103 as
unpatentable over Lee and further in view of Keyser.
We reverse as to all three grounds of rejection.
2
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