Appeal No. 2001-0646
Application No. 09/227,935
The disclosed invention relates to an integrated
semiconductor device structure. The inventive structure is an
improvement upon the prior art device depicted in Fig. 15 of
Appellants’ disclosure. According to Appellants (Brief at page
3), the impurity region 12 in Fig. 15 of the disclosure is
modified to have two impurity regions (50 and 52 in Fig 1 of
Appellants’ disclosure) and the connection hole 10a in Fig. 1 is
coated with an anti-HF (hydrofluoric acid) to make it resistant
to the hydrofluoric acid which is used as etch during the
formation of the impurity regions 50 and 52.
Claim 1 is illustrative of the invention and reads as
follows:
1. A semiconductor device, comprising:
a semiconductor substrate having a main surface;
an element isolating region for defining an element
forming region on the main surface of said semiconductor
substrate;
an isolation region provided in a strip-shape and
having a peak impurity concentration at a prescribed depth
position from the main surface of said semiconductor
substrate;
a connection hole provided piercing through said
element isolating region;
2
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