Appeal No. 2001-0646
Application No. 09/227,935
an anti-HF (hydrofluoric acid) side wall film not
etched by hydrofluoric acid, provided to cover a side wall
of said connection hole at least near a lower end of said
connection hole;
an interconnection layer provided to fill an inner
portion of said connection hole; and
an impurity region provided in said semiconductor
substrate extending from the lower end of said connection
hole to said isolation region, wherein said impurity region
comprises a first impurity region portion provided to
connect said interconnection layer to said isolation region,
and a second impurity region portion provided near the lower
end of said connection hole and connected to said
interconnection layer.
The Examiner relies on the following prior art reference:1
Kuroda 5,825,059 Oct. 20, 1998
(filed Jan. 30, 1997)
Claims 1, 2 and 4 stand rejected under 35 U.S.C. § 103(a) as
unpatentable over the admitted prior art in view of Kuroda.
Rather than repeating the arguments of Appellants and the
Examiner, we make reference to the Briefs (Paper Nos. 15 and 17)
and the Examiner’s Answer (Paper No. 16) for the respective
details thereof.
1 In addition, the Examiner relies on the admitted prior art illustrated at
Figure 15 and described beginning at pages 1 and 2 of Appellants’
specification.
3
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