Appeal No. 2001-0776
Application 09/276,043
this claim, along with claims 13 and 14, have been separately
rejected in a second rejection).
Claims 1 and 11 are set forth below:
1. A fabrication method for adhering tungsten to an
underlying layer of dielectric or silicon, comprising the steps
of:
(a) providing an underlying layer of a dielectric or
silicon;
(b) forming a thin layer of silicon over said underlying
layer, said layer of silicon having a thickness less than 5nm;
(c) nitriding said thin layer of silicon to form silicon
nitride layer less than the tunneling thickness of said silicon
nitride layer; and
(d) depositing a layer of CVD tungsten in contact with said
thin nitrided layer of silicon, said layer of tungsten adhering
to said nitrided layer of silicon.
11. A fabrication method for adhering tungsten to an
underlying layer of dielectric or silicon, comprising the steps
of:
(a) providing an underlying layer;
(b) forming a thin layer of a first material over said
underlying layer;
(c) nitriding said thin layer of first material, said
nitrided layer of first material having a thickness less than the
tunneling thickness of said nitrided layer of first material, and
(d) depositing a layer of CVD tungsten in contact with said
thin nitrided layer of first material, said layer of tungsten
adhering to said underlying layer.
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