Appeal No. 2001-1068
Application 09/063,196
The disclosed invention relates to a method of
cleaning/stabilizing a plasma enhanced chemical vapor deposition
(PECVD) processing chamber.
Claims 1 and 29 are illustrative of the claimed
invention, and they read as follows:
1. A method of maintaining the stability of a PECVD
processing chamber for the plasma enhanced chemical vapor
deposition of titanium onto substrates when supported therein
comprising the steps of:
following the plasma enhanced chemical vapor deposition
of titanium in the reactor during which TiClx is deposited onto
and coats surfaces of components of the chamber:
introducing an oxidizing or reducing gas
into the chamber and exposing thereto TiClx
coated surfaces of components of the chamber
for a period of time sufficient to allow the
deposited material to stabilize the TiClx
coated surfaces.
29. A method of maintaining the stability of a CVD
processing chamber for the plasma enhanced chemical vapor
deposition of a metal-containing material onto substrates when
supported therein comprising the steps of:
following plasma enhanced chemical vapor deposition of
the material in the reactor:
introducing a stabilizing gas into the
chamber and exposing surfaces of components
of the chamber that have been coated with
unstable volatile compounds of the material
to the gas for a period of time sufficient to
allow the compounds of the material deposited
2
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