Appeal No. 2001-2042
Application No. 09/025,006
APPEALED SUBJECT MATTER
The subject matter on appeal is directed toward a thin film transistor on a low-
temperature plastic substrate. Details of the appealed subject matter are provided in
representative claim 17 below:
17. A thin film transistor, consisting of:
a substrate composed of low-temperature plastic,
said low-temperature plastic substrate being not capable of withstanding sustained
processing temperatures greater than about 2500C,
an insulating layer of SiO2 on the plastic,
a layer of silicon on the insulating SiO2 layer, said layer of silicon being composed of
sections of doped silicon and undoped silicon,
said layer of silicon including sections of poly-silicon,
a gate dielectric layer of SiO2 on at least a section of the layer of silicon,
a layer of gate metal on at least a section of the gate dielectric layer of SiO2,
a layer of oxide on sections of said layer of silicon and said layer of gate metal, and
metal contacts on sections of said layer of silicon and said layer of gate metal, defining
source, gate, and drain contacts and interconnects.
PRIOR ART
The examiner relies on the following prior art references:
Kaschmitter et al. (Kaschmitter) 5,346,850 Sep. 13, 1994
Kwo 5,523,587 Jun. 4, 1996
The appellants’ admission at page 9 of the specification (hereinafter referred to as
“admitted prior art”).
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