The opinion in support of the decision being entered today was not
written for publication and is not binding precedent of the Board.
Paper No. 12
UNITED STATES PATENT AND TRADEMARK OFFICE
____________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
____________
Ex parte JIH-CHURNG TWU, SYUN-MING JANG, and CHEN-HUA YU
____________
Appeal No. 2002-0102
Application No. 09/298,879
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ON BRIEF
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Before KIMLIN, LIEBERMAN, and POTEATE, Administrative Patent
Judges.
POTEATE, Administrative Patent Judge.
DECISION ON APPEAL
This is an appeal under 35 U.S.C. § 134 from the examiner's
refusal to allow claims 1-8, 10-15 and 18-22, which are all of
the claims pending in the application.
Claim 1 is representative of the subject matter on appeal
and is reproduced below:
1. The method of simultaneously forming both a high voltage and
a low voltage transistor in the manufacture of an integrated
circuit comprising:
providing a semiconductor substrate wherein active areas of
said substrate are isolated from other active areas and wherein
there is at least one low voltage area in which said low voltage
transistor will be formed and at least one high voltage area in
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