Appeal No. 2002-1167
Application No. 09/089,445
bulk semiconductive material such as a semiconductive wafer, either
alone or in assemblies comprising other materials thereon, and
semiconductive material layers, either alone or in assemblies
comprising other materials” (col. 1, line 62 - col. 2, line 2).
This definition indicates that “semiconductor substrate” in the
phrase “[a] drawback to the use of rugged polysilicon is that the
conductive grains thereof can become detached from an underlying
semiconductor substrate” includes a base semiconductor substrate
having layers thereon. This interpretation is supported by
Zahurak’s disclosure that his HSG polysilicon layer (20) is
attached to an insulative layer (12) which has been formed on a
silicon substrate (11) (figure 1F).
Zahurak, therefore, would have fairly suggested, to one of
ordinary skill in the art, applying his RTN to HSG polysilicon
which has been formed on any layer on a base semiconductor
substrate, such as the electrode layer of Cho or Wu. Accordingly,
we affirm the rejections over Cho or Wu, in view of Zahurak.
Rejection of claim 23 over
Wu in view of Zahurak and Kotecki
Claim 23 requires that the double sided electrode is formed
of a metal, wherein an oxide of the metal is conductive.
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