Appeal No. 2003-0543
Application 09/292,745
The claimed invention relates to a semiconductor device
which is provided with copper traces for connecting active
elements to an external device. More particularly, insulating
layers of black oxide (cupric oxide) are formed on the copper
traces, the black oxide functioning as a substitute for the
conventionally used solder resist mask.
Claim 1 is illustrative of the invention and reads as
follows:
1. A semiconductor device, comprising:
semiconductor active elements;
metal traces for connecting said active elements to an
external device, wherein said metal is copper; and
insulating layers on said metal traces, said insulating
layers including black oxide, wherein said black oxide is a
substitute for a solder resist mask.
The Examiner relies on the following prior art:
Ma et al. (Ma) 5,742,483 Apr. 21, 1998
Berg et al. (Berg) 5,756,380 May 26, 1998
Shimazu JP 06-338535 Dec. 06, 1994
(Published Japanese Patent Application)1
1 A copy of a translation provided by the U.S. Patent and Trademark
Office, October 2000, is included along with this decision.
2
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