Appeal No. 2003-1208
Application 09/590,805
is more susceptible than that of the other to being lowered by
ionizing radiation. Claim 1 is illustrative:
1. An integrated circuit comprising:
a first device comprising a first lead, a second lead, and a
third lead, wherein said third lead of said first is electrically
connected to ground; and
a second device comprising a first lead, a second lead, and
a third lead, wherein said third lead of said second device is
electrically connected to ground, and wherein said first lead of
said second device is electrically connected to said first lead
of said first device;
wherein the effective threshold voltage of said first device
is more susceptible to be lowered by ionizing radiation than is
the effective threshold voltage of said second device.
THE REFERENCES
Tursky et al. (Tursky) 5,294,843 Mar. 15, 1994
Kalnitsky 5,589,708 Dec. 31, 1996
Murdock et al. (Murdock) 5,748,412 May 5, 1998
THE REJECTIONS
The claims stand rejected under 35 U.S.C. § 103 as follows:
claims 1, 2, 4-7 and 22-25 over Kalnitsky or Murdock, in view of
the appellants’ admitted prior art, and claim 3 over Kalnitsky or
Murdock, in view of the appellants’ admitted prior art and
Tursky.
operating parameters (e.g., the effective threshold voltage, VT,
etc.) of the transistor” (page 7, line 29 - page 8, line 2).
2
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