Appeal No. 2003-1208
Application 09/590,805
[a] sensor located on the chip could then determine the
difference between the two types of transistors and
sense the accumulated dose of radiation. A “self
adapting” circuit could be used to compensate for the
loss of performance due to the ionizing radiation. For
example, a substrate biasing circuit composed of the
two types of transistors could be used to sense the
different degradation characteristics of the
transistors and a differential signal could then be
used to adjust for the radiation-induced loss of
performance. [col. 3, lines 39-47]
The disclosures that 1) the sensor is on the chip (i.e., the
integrated circuit), 2) the sensor determines the difference
between the degradation characteristics of the two types of
transistors, and 3) a differential signal based upon that
difference is used to adjust for the radiation-induced loss of
performance of the standard transistor, would have indicated to
one of ordinary skill in the art that the transistors are
electrically connected in parallel with a common input (i.e.,
first leads electrically connected as required by the appellants’
claim 1) such that the difference in radiation-induced
degradation characteristics is sensed and the differential signal
based upon that difference is generated.
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