Appeal No. 2000-1642
Application No. 08/104,264
BACKGROUND
The invention is directed to a thin film transistor. Representative claim 81 is
reproduced below.
81. A thin film transistor comprising:
a pair of source and drain regions;
a channel region between said source and drain regions; and
a gate electrode adjacent to said channel region with a gate insulating film
interposed therebetween,
said channel region comprising an amorphous silicon semiconductor
material doped with a recombination center neutralizer selected from the group
consisting of H, a halogen and a combination thereof;
said pair of source and drain regions comprising a non-single crystal
semiconductor material doped with a recombination center neutralizer selected
from the group consisting of H, a halogen and a combination thereof, and having
an impurity conductivity type to form junctions in contact with said channel
region,
wherein at least a portion of said gate insulating film which is in direct
contact with said channel region comprises a nitride.
The examiner relies on the following references:
Ovshinsky et al. (Ovshinsky) 4,605,941 Aug. 12, 1986
(effective filing date on or before Oct. 10, 1980)
Yamazaki (Yamazaki '330) 55-11330 Jan. 26, 1980
(Japanese Kokai Patent Application)1
1 With English translation provided by the USPTO, dated Jul. 2000.
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