Appeal No. 2000-1642
Application No. 08/104,264
Yamazaki (Yamazaki '663) 55-50663 Apr. 12, 1980
(Japanese Kokai Patent Application)2
A. Madan et al. (Madan), Investigation Of The Density Of Localized States In a-Si Using
The Field Effect Technique, Journal of Non-Crystalline Solids 20, pp. 239-257 (1976).
LeComber et al. (LeComber), Amorphous-Silicon Field-Effect Device and Possible
Application, Electronics Letters Vol. 15 No. 6, pp. 179-181 (Mar. 15, 1979).
Matsumura et al. (Matsumura), a-Si FET IC integrated on a glass substrate (with
English translation (5 pages)), National Convention Record, The Institute of Electronics
and Communication Engineers of Japan, p. 2-287 et seq. (Mar. 1980).
Claims 81-90, 92, and 96-98 stand rejected under 35 U.S.C. § 103 as being
unpatentable over Matsumura, Yamazaki '330, LeComber, Ovshinsky, Madan, and
Yamazaki '663.
We refer to the Final Rejection (Paper No. 53) and the Examiner’s Answer
(Paper No. 61) for a statement of the examiner’s position and to the Brief (Paper No.
58) and the Reply Brief (Paper No. 63) for appellants’ position with respect to the claims
which stand rejected.
OPINION
This case turns on substantially the same issues that were before this panel of
the board in an earlier appeal in a related application (Appeal No. 1999-1466,
Application No. 08/371,486). In that appeal we were persuaded by the appellants that
2 With English translation provided by the USPTO, dated Jul. 2000.
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