Appeal No. 2002-1701 Page 2
Application No. 09/076,111
The appellants' MR effect device features a sequence of layers including
a sublayer, a NiFe layer, a nonmagnetic layer, an MR enhancement layer, a fixed
magnetic layer, and an antiferromagnetic layer. The sublayer comprises either Ta that
is not less than 0.2 nm thick and less than 1.0 nm thick, Hf that is not less than 0.2 nm
thick and not more than 1.5 nm thick, or Zr that is not less than 0.2 nm thick and not
more than 2.5 nm thick. According to the appellants, their sequence enhances
"crystallinity" and improves heat resistance. (Appeal Br. at 2.)
A further understanding of the invention can be achieved by reading the following
claim.
1. A magnetoresistance effect device comprising:
a substrate;
a sublayer directly on and contacting said substrate, said sublayer
being one of (1) Ta that is not less than 0.2 nm thick and less than 1.0 nm
thick, (2) Hf that is not less than 0.2 nm thick and not more than 1.5 nm
thick, and (3) Zr that is not less than 0.2 nm thick and not more than 2.5
nm thick;
an NiFe layer directly on and contacting said sublayer;
a non-magnetic layer directly on and contacting said NiFe layer;
a fixed magnetic layer directly on and contacting said non-magnetic
layer; and
an antiferromagnetic layer directly on and contacting said fixed
magnetic layer.
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007