Ex Parte JIN et al - Page 4



          Appeal No. 2003-0512                                                        
          Application 09/184,805                                                      

          deposited tungsten layer, and a tungsten layer 309.  Cadien’s               
          method comprises polishing the tungsten layer 309 with a first              
          slurry (column 6, line 36 to column 8, line 43), polishing the              
          titanium nitrate adhesion layer 306 with a second slurry (column            
          8, lines 43 to 66), and polishing the titanium contact layer 305            
          with a third slurry (column 8, line 67 to column 9, line 52).               
          The resulting polished substrate is illustrated in Fig. 3d.                 
          Central to Cadien is the utilization of a specifically engineered           
          slurry for polishing each of the layers 308, 306 and 305.                   
               In rejecting the appealed claims, the examiner found, and              
          appellants did not dispute, that Cadien discloses polishing the             
          filler layer 308 of a substrate with a first slurry and a second            
          slurry, wherein the slurries have different selectivities.1  The            
          examiner concedes that Cadien does not disclose polishing the               
          filler layer with the first slurry until the stop layer is                  
          partially covered and partially exposed, and then polishing the             
          filler layer with the second slurry until the stop layer is                 
          substantially exposed, as called for in the claims.  The examiner           

               1 In accordance with appellants’ specification, the                    
          “selectivity” of a slurry as used in the appealed claims refers             
          to the ratio of the polishing rate of the filler layer to the               
          polishing rate of the stop layer.  Specification, page 8, lines             
          29-33.                                                                      
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