Appeal No. 2003-2176
Application No. 09/778,460
THE INVENTION
Appellant’s claimed invention is directed to a method of manufacturing a
semiconductor device. Representative semiconductor devices include voltage
regulators and voltage detectors. (Specification, p. 5). Claims 4 and 7 are
illustrative:
4. A method of manufacturing a semiconductor device, comprising
the steps of:
forming an NMOS transistor having source and drain regions on a
semiconductor substrate;
forming a PMOS transistor having source and drain regions on the
semiconductor substrate; and
combining together an N-type thin film resistor having a low
resistance region and a P-type thin film resistor having a low
resistance region to form a semiconductor thin film resistor unit;
wherein the low resistance region of the N-type thin film resistor of the
semiconductor thin film resistor unit is formed simultaneously with the
source and drain regions of the NMOS transistor; and
wherein the low resistance region of the P-type thin film resistor of the
semiconductor thin film resistor unit is formed simultaneously with the
source and drain regions of the PMOS transistor.
7. A method of manufacturing a semiconductor device, comprising
the steps of:
forming an NMOS transistor having source and drain regions on a
semiconductor substrate;
forming a PMOS transistor having source and drain regions on the
semiconductor substrate; and
forming on the semiconductor substrate a bleeder resistance circuit
having a plurality of semiconductor thin film resistor units each
formed by combining together an N-type thin film resistor having a
low resistance region and a P-type thin film resistor having a low
resistance region.
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