Appeal No. 2003-2176
Application No. 09/778,460
resistor having a low resistance region and a P-type thin film resistor having a low
resistance region to form a semiconductor thin film resistor unit.
The subject matter of claim 7 is directed to a method of manufacturing a
semiconductor device, comprising a bleeder resistance circuit. A bleeder resistance
circuit is described as a plurality of semiconductor thin film resistor units each
formed by combining together an N-type thin film resistor having a low resistance
region and a P-type thin film resistor having a low resistance region.
Erdeljac teaches the formation of a semiconductor device. According to the
Examiner, Erdeljac teaches a process for simultaneously forming the source and
drain regions of the NMOS transistor and the low resistance region of an N-type thin
film. Erdeljac also teaches simultaneously forming the source and drain regions of
the PMOS transistor and the low resistance region of a P-type thin film resistor.
According to the Examiner, Erdeljac does not teach connecting the transistors
together as a unit. (Answer, pp. 3-4). However, Erdeljac teaches that the pairing of
resistors is generally known. (Col. 3, ll. 35 to 55).
According to the Examiner, Inaba teaches the connecting of resistors together
to obtain a reliable dividing voltage. (Answer, p. 4). The Examiner also determined
that Inaba discloses multiple resistors can be connected in series and parallel to
work as one unit. (Answer, p. 5). Inaba discloses a level shifter as a
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