Appeal No. 2004-0393
Application 09/388,824
This is a decision on appeal under 35 U.S.C. § 134(a) from
the final rejection of claims 53-60.
We affirm-in-part.
BACKGROUND
The invention relates to a method of forming an integrated
circuit having conductive paths of different heights.
Claim 53 is reproduced below.
53. A method for forming a memory circuit, comprising:
forming a structure on a substrate, the structure
including a first conductive layer disposed on the substrate
and a second conductive layer disposed on the first
conductive layer;
removing the second conductive layer from a first
region of the structure while preserving the second
conductive layer in a second region of the structure;
forming digit lines from the first conductive layer in
the first region of the substrate in a direction normal to
the substrate; and
forming a high current line in a spaced parallel
relationship with the digit lines, the high current line
being formed from the first and second conductive layers in
the second region of the substrate.
The examiner relies on the following reference:
Jimenez 5,543,358 August 6, 1996
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