Appeal No. 2004-0574
Serial No. 09/259,145
substantially dopant-free, uninterrupted diffusion barrier.
Claim 33 is illustrative:
33. An intermediate structure in the formation of an
isolation structure for a semiconductor device, comprising:
a semiconductor substrate having at least a portion free of
field oxide structures and having a first surface and a second
surface, said first surface opposing said second surface;
at least one p-well and at least one n-well on said
substrate first surface;
at least one activated, annealed doped area within at least
one of said at least one n-well and said at least one p-well; and
a substantially dopant-free, uninterrupted diffusion barrier
layer extending over said first surface and said second surface
of said semiconductor substrate, said substantially dopant-free,
uninterrupted diffusion barrier layer encapsulating said
semiconductor substrate.
THE REFERENCES
Tada 5,545,577 Aug. 13, 1996
Shim et al. (Shim) 5,846,596 Dec. 8, 1998
(filed Feb. 4, 1997)
Koike 5,874,325 Feb. 23, 1999
(filed Oct. 21, 1996)
Stanley Wolf and Richard N. Tauber (Wolf), 1 Silicon Processing
for the VLSI Era 262-65 (Lattice Press 1986).
THE REJECTIONS
The claims stand rejected under 35 U.S.C. § 103 as follows:
claims 25, 26, 31, 33, 34, 37-40 and 43-48 over Tada in view of
Koike and Wolf, and claims 32 and 49 over Tada in view of Koike
and Shim.
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