Appeal No. 2004-0652 Application No. 09/396,642 superseding rejections of the claims. In response, the appellants filed a second supplemental brief (Paper No. 13) and again requested that the appeal be reinstated. The examiner then entered an answer (Paper No. 14), noted a reply brief (Paper No. 15) filed by the appellants and forwarded the application to this Board for review of the current rejections of claims 1 through 12. Claims 13 through 15, the only other claims pending in the application, stand withdrawn from consideration. THE INVENTION The invention relates to “semiconductor device fabrication and processing” (specification, page 1). Representative claims 1 and 9 read as follows: 1. A method of forming an electrically conductive structure insulatively spaced from a second structure, said method comprising the steps of: providing said second structure; forming an electrically insulative layer on said second structure; forming on said electrically insulative layer and spaced form [sic, from] said second structure an unoxidized electrically conductive structure of a material that remains substantially conductive in the oxidized state; and then subjecting said electrically conductive structure and said electrically insulative layer to an ozone containing atmosphere for a duration of time and at a first temperature sufficient to oxidize said unoxidized electrically conductive structure. 9. A method of forming a capacitor over a semiconductor substrate, said method comprising the steps of: providing a first electrically conductive electrode on said semiconductor substrate; 2Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 NextLast modified: November 3, 2007