Ex Parte WILK et al - Page 2



          Appeal No. 2004-0652                                                        
          Application No. 09/396,642                                                  

          superseding rejections of the claims.  In response, the                     
          appellants filed a second supplemental brief (Paper No. 13) and             
          again requested that the appeal be reinstated.  The examiner then           
          entered an answer (Paper No. 14), noted a reply brief (Paper No.            
          15) filed by the appellants and forwarded the application to this           
          Board for review of the current rejections of claims 1 through              
          12.  Claims 13 through 15, the only other claims pending in the             
          application, stand withdrawn from consideration.                            
                                   THE INVENTION                                      
               The invention relates to “semiconductor device fabrication             
          and processing” (specification, page 1).  Representative claims 1           
          and 9 read as follows:                                                      
               1. A method of forming an electrically conductive structure            
          insulatively spaced from a second structure, said method                    
          comprising the steps of:                                                    
               providing said second structure;                                       
               forming an electrically insulative layer on said second                
          structure;                                                                  
               forming on said electrically insulative layer and spaced               
          form [sic, from] said second structure an unoxidized electrically           
          conductive structure of a material that remains substantially               
          conductive in the oxidized state; and                                       
               then subjecting said electrically conductive structure and             
          said electrically insulative layer to an ozone containing                   
          atmosphere for a duration of time and at a first temperature                
          sufficient to oxidize said unoxidized electrically conductive               
          structure.                                                                  
               9. A method of forming a capacitor over a semiconductor                
          substrate, said method comprising the steps of:                             
               providing a first electrically conductive electrode on said            
          semiconductor substrate;                                                    
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