Appeal No. 2004-0652
Application No. 09/396,642
consisting of: tantalum pentoxide, BST, PZT, a silicate, an
oxide, a nitride, a combination thereof and a stack of one or
more thereof, and Nishioka’s teaching that the annealing and
oxidation step can take place at a temperature of 600°C. meets
the recitation in claim 7 that the first temperature is around 20
to 600 C.
On the other hand, Nishioka’s description of the use of
ozone in the annealing and oxidation step is not specific enough
to meet the recitation in dependent claim 4 of “remotely” forming
the ozone.
In light of the foregoing, we shall sustain the standing 35
U.S.C. § 102(b) rejection of claims 1, 2, 4, 5 and 7 as being
anticipated by Nishioka with respect to claims 1, 2, 5 and 7, but
not with respect to claim 4.
II. The 35 U.S.C. § 103(a) rejection of claims 3 and 6 through 12
as being unpatentable over Nishioka in view of Wong
Wong discloses a method for etching a silicon wafer using
hydrogen fluoride and water vapor combined with ozone. Of
interest is Wong’s teaching that the ozone may be produced (1) in
a remote plasma generator or (2) in the etching apparatus itself
using ultraviolet excitation (see column 2, lines 49 through 57).
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