Appeal No. 2004-1853 Page 2
Application No. 09/983,625
regions. A further understanding of the invention can be derived
from a reading of exemplary claim 1, which is reproduced below.
1. A method of manufacturing a semiconductor device,
comprising the steps of:
forming a gate electrode over a substrate and a gate
oxide between the gate electrode and the substrate;
implanting dopants within the substrate to form
source/drain regions in the substrate proximate to the gate
electrode;
laser thermal annealing to active the source/drain
regions; and
forming a nickel silicide layer disposed on the
source/drain regions after the laser thermal annealing of
the source/drain regions.
The sole prior art reference of record relied upon by the
examiner in rejecting the appealed claims is:
Chong et al. (Chong) 6,365,446 Apr. 02, 2002
(filed Jul. 03, 2000)
Claims 1-11 stand rejected under 35 U.S.C. § 102(e) as being
anticipated by Chong.
We refer to the briefs and to the answer for a complete
exposition of the opposing viewpoints expressed by appellants and
the examiner concerning the issues before us on this appeal.
OPINION
Upon consideration of the respective positions advanced by
appellants and the examiner with respect to the rejection that is
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