Appeal No. 2005-0287 Page 17
Application No. 09/216,214
a silicided polysilicon gate structure. See the last line of
page 3 of the second reply brief. As evidenced by a review of
drawing figures 8A-8E and 9A-9E of Watabe and the corresponding
text in the patent specification describing those drawing
figures, Watabe teaches a transistor structure that includes: (a)
a region of semiconductor material (1) that includes a gate
dielectric (2) thereover; (b) a polysilicon gate (3) having a
top, bottom and sidewalls as depicted in figures 8A-8E and 9A-9E;
(c) a silicide layer (52 or 60) located on the top and sidewalls
of the gate as depicted in drawing figures 8D, 8E, 9D and 9E; and
spaced apart source/drain regions (5) adjacent to and aligned
with the silicide sidewall layers as shown in drawing figures 8D,
8E, 9D and 9E. Thus, in addition to the reasons advanced above
with respect to claim 9 and the reasons as stated in the answer
with respect to the combined teachings of Watabe and Arai, Watabe
alone reasonably suggests the claimed structure of appealed
claim 10.
As for dependent claim 12, appellant argues the titanium
silicide layer at page 8 of the brief. However, Watabe clearly
describes siliciding titanium to form a layer of such a silicide
over the gate at column 7, lines 13-18. Consequently, we do not
find that additional argument persuasive.
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