Ex Parte Herman - Page 4




                     Appeal No. 2005-0328                                                                                                            
                     Application No. 09/723,655                                                                                                      

                              In response, the examiner states, on pages 7 and 8 of the answer:                                                      
                                       With regard to the appellant’s arguments that “Davies teaches                                                 
                              forming sidewall spacers 18 before forming low resistivity regions 17,” it                                             
                              should be noted that Davies, in column 4, lines 38-43, specifically recites                                            
                              the situation where sidewall spacers are not used in implanting the low                                                
                              resistivity regions 17 which correspond to the claimed second base                                                     
                              diffusion.  Thus Davies teaches in figures 1-4 and column 4, lines 38-43                                               
                              the limitation wherein the stripes of oxide and polysilicon do not include                                             
                              sidewall spacers during implanting and diffusion of the second base                                                    
                              diffusion.  Therefore, the arguments are not persuasive, and the rejection                                             
                              is proper.                                                                                                             
                                       With regard to the appellant’s argument that “Davies actually                                                 
                              teaches away from using the oxide and polysilicon stripes as a mask in                                                 
                              forming the second base regions (low resistivity regions 17),” it should be                                            
                              noted Davies never states that the claimed situation cannot produce a                                                  
                              working device.  While Davies suggests in column 4, lines 25-43  “it has                                               
                              been found that if a thin oxide, analogous to oxide 15 [which is a misprint                                            
                              and should be ‘oxide 16’] shown in Fig.1, is used rather than a sidewall                                               
                              spacer 18, insufficient separation between base 12 and low resistively                                                 
                              region 17 is provided, and correspondingly low yield result,” (emphasis                                                
                              added [by examiner]) it is clear that insufficient separation does not make                                            
                              the device inoperable.  Low yields, whether good or bad, do not make                                                   
                              Davies teach away from the subject matter.  On the contrary, the low                                                   
                              yields cited by Davies when sidewall spacers are not used prove that this                                              
                              method is disclosed and does produce a working device.  Therefore,                                                     
                              appellant’s arguments are not persuasive, and the rejection is proper.                                                 

                     We disagree with the examiner’s rationale.  Claim 9 includes the limitation                                                     
                     “wherein said stripes of oxide and polysilicon do not include sidewall spacers                                                  
                     during implanting and diffusing of said first base diffusion stripes, said source                                               
                     diffusions, and said second base diffusions.”  We concur with the appellant that                                                
                     Davies teaches away from this limitation.                                                                                       




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