Ex Parte Yajima - Page 1



               The opinion in support of the decision being entered today was not     
               written for publication and is not binding precedent of the Board.     

                       UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                     ____________                                     
                          BEFORE THE BOARD OF PATENT APPEALS                          
                                   AND INTERFERENCES                                  
                                     ____________                                     
                                Ex parte TSUKASA YAJIMA                               
                                     ____________                                     
                                 Appeal No. 2005-0520                                 
                              Application No. 09/768,271                              
                                     ____________                                     
                                       ON BRIEF                                       
                                     ____________                                     
          Before KIMLIN, GARRIS and PAWLIKOWSKI, Administrative Patent                
          Judges.                                                                     
          KIMLIN, Administrative Patent Judge.                                        

                                  DECISION ON APPEAL                                  
               This is an appeal from the final rejection of claims 6-9 and           
          11-19, all of the claims remaining in the present application.              
          Claim 6 is illustrative:                                                    
               6.  A semiconductor device comprising:                                 
               first and second gates formed on active regions of a                   
          substrate, said first and second gates each consisting of a                 
          refractory metal layer on a polysilicon layer;                              
               a field oxide formed on the substrate between said first and           
          second gates;                                                               







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