Appeal No. 2005-0520
Application 09/768,271
side walls formed on side surfaces of said first and second
gates, said side walls being a silicon oxide film;
a protective layer formed selectively on said field oxide to
prevent overetching of said field oxide, said protective layer
being a material different than said field oxide; and
an insulating layer, a contact hole, and a connecting wire
formed above a surface of the substrate.
The examiner relies upon the following reference in the
rejection of the appealed claims:
Yoo et al. (Yoo) 5,605,853 Feb. 25, 1997
Appellant’s claimed invention is directed to a semiconductor
device comprising first and second gates, a field oxide formed on
the substrate between the gates, and a protective layer of poly-
silicon formed on the field oxide. According to appellant,
“[p]olysilicon layer 12 prevents etching of field oxide 34 during
this overetching of oxide layer 36, preventing decreases of field
isolation voltage caused by thinning of field oxide 34 (page 14,
lines 1-7)” (page 4 of Brief, second paragraph).
Appealed claims 6-9 and 11-19 stand rejected under 35 U.S.C.
§ 102(b) as being anticipated by Yoo.
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