Appeal No. 2005-0779
Application No. 09/802,084
promote quantum well intermixing. This appealed subject matter
is adequately represented by independent claim 1 which reads as
follows:
1. A method of manufacturing a photonic integrated circuit
comprising a compound semiconductor structure having a
quantum well region, comprising the steps of irradiating the
structure using a source of photons to generate defects, the
photons having an energy (E) at least that of the
displacement energy (ED) of at least one element of the
compound semiconductor, and subsequently annealing the
structure to promote quantum well intermixing.
The references set forth below are relied upon by the
examiner in the Section 102 and Section 103 rejections before us:
Burnham et al. (Burnham) Re. 33,274 Jul. 24, 1990
Poole et al. (Poole) 6,027,989 Feb. 22, 2000
Feldman et al. (Feldman) 6,071,652 Jun. 6, 2000
Thompson et al. (Thompson) US 2002/0127752 A1 Sep. 12, 2002
Claims 1 and 4-9 are rejected under 35 U.S.C. § 102(b) as
being anticipated by Burnham.
Claims 2, 3 and 16 are rejected under 35 U.S.C. § 103(a) as
being unpatentable over Burnham in view of Thompson, and claims
10-15 stand rejected under 35 U.S.C. § 103(a) as being
unpatentable over Burnham in view of Poole and Feldman.
We refer to the brief and reply brief and to the answer for
a complete discussion of the opposing viewpoints expressed by the
appellants and by the examiner concerning the above noted
rejections.
2
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