Appeal No. 2005-0813
Application No. 09/871,492
semiconductor substrate, a pair of mirrors doped n-type
sandwiched about an active region which includes one or more
indium gallium arsenide nitride (InGaAsN) quantum wells, and a
tunnel junction included in a n-type mirror that functions to
inject holes into the active region for recombination with
electrons to generate lasing action and the emission of light at
a nominal wavelength of 1300 nanometers (nm)(Brief, page 3).
Representative independent claim 1 is reproduced below:
1. A vertical cavity surface emitting laser comprising:
a substrate;
a first n-type mirror adjacent the substrate;
an active region including one or more quantum wells, the
quantum wells being formed of InGaAsN;
a second n-type mirror adjacent the active region, the
second mirror including a tunnel junction for injecting
holes into the active region,
wherein the laser emits light at a nominal wavelength of
1300 nm.
The examiner has relied upon the following references as
evidence of obviousness:
Lebby et al. (Lebby) 5,956,363 Sep. 21, 1999
Brillouet et al. (Brillouet) 6,052,398 Apr. 18, 2000
The claims on appeal stand rejected under 35 U.S.C. § 103(a)
as unpatentable over Lebby in view of Brillouet (Answer, page 3).
We reverse this rejection essentially for the reasons stated in
the Brief, Reply Brief, and those reasons set forth below.
2
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