Appeal No. 2005-1065
Application No. 10/095,053
appellant’s specification (p. 2, l. 24-p. 3, l. 22), the claimed
method provides a gate oxide film of uniform thickness where the
thickness directly above an oxidation preventive film at the top
edge of a trench structure is of the same order as the thickness
of the gate oxide film at other locations along the surface of
the semiconductor substrate. This is said to solve a so-called
“thinning” problem experienced in the prior art.1
Appellant’s brief (page 4) stipulates that the appealed
claims stand or fall together with independent claim 1.
Accordingly, we shall limit our consideration to claim 1 which
reads as follows:
1. A method of manufacturing a semiconductor device
comprising:
a step of forming a trench at a main surface of a
semiconductor substrate;
the step of forming an oxidation preventive film along
an inner wall of said trench;
the step of forming a filling layer so as to fill said
trench; and
1We note in passing that appellant’s brief and reply brief
erroneously state that it is the oxidation preventive film,
rather that the gate oxide film, which is subject to thinning.
This is clearly not the case, as thoroughly discussed in
appellant’s specification.
2
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