Appeal No. 2005-1065
Application No. 10/095,053
In fact, according to appellant’s specification (p. 2, ll.
12-16), in the prior art the oxidation necessary to form a gate
oxide film is effected by introducing hydrogen gas and oxygen gas
into a reaction vessel accommodating wafers after the gases react
with each other, or introducing only oxygen gas into the vessel.
For the foregoing reasons, the decision of the examiner is
reversed.
REVERSED
MARC L. CAROFF )
Administrative Patent Judge )
)
)
) BOARD OF PATENT
CHUNG K. PAK ) APPEALS AND
Administrative Patent Judge ) INTERFERENCES
)
)
)
PETER F. KRATZ )
Administrative Patent Judge )
MLC:hh
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