Ex Parte Inoue - Page 6



          Appeal No. 2005-1065                                                        
          Application No. 10/095,053                                                  

               In fact, according to appellant’s specification (p. 2, ll.             
          12-16), in the prior art the oxidation necessary to form a gate             
          oxide film is effected by introducing hydrogen gas and oxygen gas           
          into a reaction vessel accommodating wafers after the gases react           
          with each other, or introducing only oxygen gas into the vessel.            
               For the foregoing reasons, the decision of the examiner is             
          reversed.                                                                   
                                      REVERSED                                        



          MARC L. CAROFF               )                                              
                    Administrative Patent Judge  )                                    
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                                                  )   BOARD OF PATENT                 
                    CHUNG K. PAK                 )     APPEALS AND                    
                    Administrative Patent Judge  )    INTERFERENCES                   
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          PETER F. KRATZ               )                                              
                    Administrative Patent Judge  )                                    




          MLC:hh                                                                      

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