Appeal No. 2005-1139 2
Application No. 10/410,792
37. A double-side mirror-polished semiconductor wafer
containing extrinsic gettering sites on a back surface of the
wafer, prepared by a process comprising the steps of:
providing a semiconductor wafer, said wafer having a
front surface and a back surface, wherein the back surface has
been polished;
forming a polysilicon layer on the front surface and
the back surface, said polysilicon layers containing oxygen;
forming a thermal oxide layer on each of the
polysilicon layers, wherein the oxide layers consume the
polysilicon layers;
stripping the thermal oxide layers off of the wafer;
and
polishing the front side of the wafer.
The examiner relies on the following references:
Brehm et al. (Brehm) 5,164,323 Nov. 17, 1992
Kato et al. (Kato) 5,942,445 Aug. 24, 1999
Claims 37-40 stand rejected under 35 U.S.C. § 103(a). As
evidence of obviousness the examiner offers Brehm in view of
Kato.
Rather than repeat the arguments of appellants or the
examiner, we make reference to the brief and the answer for the
respective details thereof.
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