Appeal No. 2005-1353
Application No. 09/851,839
of the substrate for a period of time sufficient to form a one
atom layer, which “reads on” appellant’s first layer of material
deposited over the substrate (id.). The examiner also finds that
Pessa teaches closing shutter 6 and opening shutter 5 to allow a
vapor beam containing Ga atoms to act on the growing surface
until a single atom layer is formed, which “reads on” appellant’s
second layer of a second material deposited over the first layer
(Answer, sentence bridging pages 3-4). The examiner finds that
the As layer and the Ga layer of atoms form a buffer layer, where
Pessa teaches that the buffer layer causes reduction in lattice
strain by creating mismatch dislocations, leading to a reduction
in threading dislocations (Answer, page 4). The examiner finds
that this “reads on” appellant’s first layer substantially
accommodating strain accumulated between the first crystal and
the second crystal during epitaxial growth, thereby preventing
strain relaxation and formation of dislocation defects (id.).
Finally, the examiner finds that Pessa teaches formation of a
GaAs film on the buffer layer by Molecular Beam Epitaxy, which
“reads on” appellant’s second crystal (id.).
The examiner relies on Hayakawa for its teaching of cleaning
a GaAs substrate by thermal desorption to remove oxidized films
(Answer, pages 4-5), as well as relying on Ogasawara, Grunthaner,
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