Appeal No. 2005-1458
Application No. 09/732,799 Page 2
17. A single crystal diamond p-type semiconductor having a
thermal conductivity of from about 26-31 W/cmoK and consisting of
at least 99.5% isotopically pure 12C or 13C and boron in an amount
not exceeding 100 ppm.
18. A method of manufacturing a single crystal diamond p-
type semiconductor having a thermal conductivity of from about
26-31 W/cmoK and a boron content not exceeding 100 ppm comprising
the steps of:
providing a carbonaceous material containing isotopically
purified 12C or 13C;
providing a flux containing a nitrogen getter;
adding boron into the carbonaceous material or/and the flux,
or around the carbonaceous material and the flux; and
diffusing the carbonaceous material into the flux under a
high temperature and pressure to form a boron-doped single
crystal diamond p-type semicconductor on a seed crystal diamond.
The prior art references of record1 relied upon by the
examiner in rejecting the appealed claims are:
Tsuji et al. (Tsuji) 5,328,548 Jul. 12, 1994
Anthony et al. (Anthony) 5,451,430 Sep. 19, 1995
1 The examiner also refers to another reference at page 3 of
the answer as representing prior art of record. However, the
examiner does not rely on that other reference in rejecting the
claims. Thus, we do not consider that other listed reference in
assessing the propriety of the rejection before us.
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